GAL22V10D-7LJI

GAL22V10D-7LJI Features

• HIGH PERFORMANCE E2CMOS® TECHNOLOGY— 4 ns Maximum Propagation Delay— Fmax = 250 MHz— 3.5 ns Maximum from Clock Input to Data Output— UltraMOS® Advanced CMOS Technology • ACTIVE PULL-UPS ON ALL PINS • COMPATIBLE WITH STANDARD 22V10 DEVICES— Fully Function/Fuse-Map/Parametric Compatiblewith Bipolar and UVCMOS 22V10 Devices • 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR— 90mA Typical Icc on Low Power Device— 45mA Typical Icc on Quarter Power Device • E2 CELL TECHNOLOGY— Reconfigurable Logic— Reprogrammable Cells— 100% Tested/100% Yields— High Speed Electrical Erasure (<100ms)— 20 Year Data Retention • TEN OUTPUT LOGIC MACROCELLS— Maximum Flexibility for Complex Logic Designs • PRELOAD AND POWER-ON RESET OF REGISTERS— 100% Functional Testability • APPLICATIONS INCLUDE:— DMA Control— State Machine Control— High Speed Graphics Processing— Standard Logic Speed Upgrade • ELECTRONIC SIGNATURE FOR IDENTIFICATION • LEAD-FREE PACKAGE OPTIONSESCRIPTION

GAL22V10D-7LJI Description

The GAL22V10, at 4ns maximum propagation delay time, combinesa high performance CMOS process with Electrically Erasable (E2)floating gate technology to provide the highest performance avail-able of any 22V10 device on the market. CMOS circuitry allowsthe GAL22V10 to consume much less power when compared tobipolar 22V10 devices. E2 technology offers high speed (<100ms)erase times, providing the ability to reprogram or reconfigure thedevice quickly and efficiently.The generic architecture provides maximum design flexibility byallowing the Output Logic Macrocell (OLMC) to be configured bythe user. The GAL22V10 is fully function/fuse map/parametric com-patible with standard bipolar and CMOS 22V10 devices.Unique test circuitry and reprogrammable cells allow complete AC,DC, and functional testing during manufacture. As a result, Lat-tice Semiconductor delivers 100% field programmability and func-tionality of all GAL products. In addition, 100 erase/write cycles anddata retention in excess of 20 years are specified.