GAL20V8B-25QPN

GAL20V8B-25QPN Features

• HIGH PERFORMANCE E2CMOS® TECHNOLOGY— 5 ns Maximum Propagation Delay— Fmax = 166 MHz— 4 ns Maximum from Clock Input to Data Output— UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOLAR— 75mA Typ Icc on Low Power Device— 45mA Typ Icc on Quarter Power Device • ACTIVE PULL-UPS ON ALL PINS • E2 CELL TECHNOLOGY— Reconfigurable Logic— Reprogrammable Cells— 100% Tested/100% Yields— High Speed Electrical Erasure (<100ms)— 20 Year Data Retention • EIGHT OUTPUT LOGIC MACROCELLS— Maximum Flexibility for Complex Logic Designs— Programmable Output Polarity— Also Emulates 24-pin PAL® Devices with Full Function/Fuse Map/Parametric Compatibility • PRELOAD AND POWER-ON RESET OF ALL REGISTERS— 100% Functional Testability • APPLICATIONS INCLUDE:— DMA Control— State Machine Control— High Speed Graphics Processing— Standard Logic Speed Upgrade • ELECTRONIC SIGNATURE FOR IDENTIFICATION • LEAD-FREE PACKAGE OPTIONSELBAMMARGORPYARRADNA-)04X46(IIIIIIIIII

GAL20V8B-25QPN Description