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ZL1505ALNNT6

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ZL1505ALNNT6

ZL1505ALNNT6
IC GATE DRVR HALF-BRIDGE 10DFN

Obsolete

Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.

Bostock Quality Assurance

ZL1505ALNNT6 Features

• High-speed, high-current drivers for synchronous N-channelMOSFETs • Adaptive dead-time control optimizes efficiency when usedwith Digital-DC controllers • Integrated 30V bootstrap Schottky diode • Capable of driving 40A per phase • Supports switching frequency up to 1.4MHz- >4A source, >5A sink low-side driver- >3A source/sink high-side driver- <10ns rise/fall times, low propagation delay • Adjustable gate drive strength optimizes efficiency fordifferent VIN, VOUT, IOUT, FSW and MOSFET combinations • Internal non-overlap watchdog prevents shoot-throughcurrents

ZL1505ALNNT6 Applications*(see page 12)

• High efficiency, high-current DC/DC buck converters withdigital control and PMBus™ • Multi-phase digital DC/DC converters with phaseadding/dropping • Power train modules • Synchronous rectification for secondary side isolated powerconverters

ZL1505ALNNT6 Pin Descriptions

PIN NUMBERPIN NAMETYPE (Note 3)DESCRIPTION1HSELIHigh-side gate drive current selector. Connect to BST for maximum gate drive current;connect to SW for 50% of maximum gate drive current.2GHOOutput of high-side gate driver. Connect to the gate of high-side FET.3SWI/OPhase node. Return path for high-side driver. Connect to source of high-side FET and drainof low-side FET.4PWMHIHigh-side PWM control input.5PWMLILow-side PWM control input.6LSELILow-side gate drive current selector. Connect to VDD for maximum gate drive current;connect to GND for 50% of maximum gate drive current.7GNDPWRGround. All signals return to this pin.8GLOOutput of low-side gate driver. Connect to the gate of low-side FET.9VDDPWRGate drive bias supply. Connect a high-quality bypass capacitor from this pin to GND.10BSTPWRBootstrap supply. Connect external capacitor to SW node.EPADGNDPWRGround.NOTE:3. I = Input, O = Output, PWR = Power OR Ground.

Product Attributes

TYPEDESCRIPTIONSelect all
Supply Voltage4.5V ~ 7.5V
Voltage Levels for Logic Low and High1.7V, 3.4V
Current - Peak Output (Source, Sink)3.2A, 3.2A
Input TypeNon-Inverting
PackageTape & Reel (TR)
Maximum High Side Voltage (Bootstrap)30 V
Product StatusObsolete
Rise / Fall Time (Typical)5.3ns, 4.8ns
ProgrammableNot Verified
Operating Temperature-40°C ~ 125°C (TJ)
Driven ConfigurationHalf-Bridge
Mounting TypeSurface Mount
Channel TypeIndependent
Package / Case10-VFDFN Exposed Pad
Number of Drivers2
Supplier Device Package10-DFN (3x3)
Gate TypeN-Channel MOSFET

Obsolete

Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.

Bostock Quality Assurance

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