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Obsolete
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
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UPA2820T1S-E2-AT Features
• VDSS = 30 V (TA = 25°C) • Low on-state resistance⎯ RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 22 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader (HWSON-8) • Pb-free, Halogen Free
UPA2820T1S-E2-AT Description
The μPA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of anotebook computer and Lithium-Ion battery protection circuit.
Product Attributes
| TYPE | DESCRIPTION | Select all |
|---|---|---|
| Maximum Input Capacitance (Ciss) at Vds | 2330 pF @ 10 V | |
| Maximum Gate Charge (Qg) @ Vgs | 50 nC @ 10 V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 5.3mOhm @ 22A, 10V | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Package / Case | 8-PowerWDFN | |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | |
| Supplier Device Package | 8-HWSON (3.3x3.3) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Mounting Type | Surface Mount | |
| Technology | MOSFET (Metal Oxide) | |
| Operating Temperature | 150°C (TJ) | |
| FET Type | N-Channel | |
| Maximum Power Dissipation | 1.5W (Ta), 16W (Tc) | |
| Maximum Gate-Source Voltage | ±20V | |
| Package | Tape & Reel (TR) | |
| Product Status | Obsolete |
Obsolete
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
Bostock Quality Assurance
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