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UPA2631T1R-E2-AX

ManufacturerRenesas Electronics America Inc.

Manufacturer Product NumberUPA2631T1R-E2-AX

DescriptionMOSFET P-CH 20V 6A 6HUSON

Datasheet UPA2631T1R-E2-AX Datasheet(pdf)

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Renesas Electronics America Inc.

Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.

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UPA2631T1R-E2-AX Features

• –1.8V drive available • Low on-state resistance⎯ RDS (on)1 = 32 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A)⎯ RDS (on)2 = 41 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A)⎯ RDS (on)3 = 62 mΩ MAX. (VGS = –1.8 V, ID = –3.0 A) • Built-in gate protection diode • Lead-free and Halogen-free

UPA2631T1R-E2-AX Description

Product Attributes

TYPE	DESCRIPTION	Select all
Maximum Input Capacitance (Ciss) at Vds	1240 pF @ 10 V
Maximum Gate Charge (Qg) @ Vgs	12.5 nC @ 4.5 V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage	62mOhm @ 3A, 1.8V
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)	1.8V, 4.5V
Package / Case	6-WFDFN Exposed Pad
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Supplier Device Package	6-HUSON (2x2)
Drain to Source Voltage (Vdss)	20 V
Mounting Type	Surface Mount
Technology	MOSFET (Metal Oxide)
Operating Temperature	150°C (TJ)
FET Type	P-Channel
Maximum Power Dissipation	2.5W (Ta)
Maximum Gate-Source Voltage	±8V
Package	Tape & Reel (TR)
Product Status	Active