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NP82N10PUF-E1-AY
NP82N10PUF-E1-AY
NP82N10PUF-E1-AY - MOS FIELD EFF
No Datasheet
$2.49
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
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NP82N10PUF-E1-AY Description
The NP82N10PUF-E1-AY parts manufactured by Renesas Electronics America Inc. are available for purchase at szcomponents electronic components distributor. Here you can find various types and values of electronic parts from the world's leading manufacturers. The NP82N10PUF-E1-AY Single FETs, MOSFETs is currently in Obsolete. It has an Operating Temperature range of 175°C. This Single FETs, MOSFETs is for Surface Mount installation. This part number is supplier device package of TO-263-3. The NP82N10PUF-E1-AY comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package. If you haven't found what you're seeking, you can acquire valuable information via email. This includes details on the NP82N10PUF-E1-AY inventory quantity, preferential pricing, datasheets, and the manufacturer. We're always eager to assist you, so don't hesitate to reach out. Feel free to contact us anytime at szcomponents.com.
Product Attributes
| TYPE | DESCRIPTION | Select all |
|---|---|---|
| Maximum Input Capacitance (Ciss) at Vds | 4350 pF @ 25 V | |
| Maximum Gate Charge (Qg) @ Vgs | 96 nC @ 10 V | |
| Maximum Gate Threshold Voltage at Drain Current | 3.3V @ 250µA | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 15mOhm @ 41A, 10V | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 5.8V, 10V | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) | |
| Supplier Device Package | TO-263-3 | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Mounting Type | Surface Mount | |
| Technology | MOSFET (Metal Oxide) | |
| Operating Temperature | 175°C | |
| FET Type | N-Channel | |
| Maximum Power Dissipation | 1.8W (Ta), 150W (Tc) | |
| Maximum Gate-Source Voltage | ±20V | |
| Package | Bulk | |
| Product Status | Obsolete |
$2.49
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
Bostock Quality Assurance
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