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$1.34
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
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NP28N10SDE-E1-AY Features
• Low on-state resistanceRDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2200 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified
NP28N10SDE-E1-AY Description
Product Attributes
| TYPE | DESCRIPTION | Select all |
|---|---|---|
| Maximum Input Capacitance (Ciss) at Vds | 3300 pF @ 25 V | |
| Maximum Gate Charge (Qg) @ Vgs | 75 nC @ 10 V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.5V @ 250µA | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 52mOhm @ 14A, 10V | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) | |
| Supplier Device Package | TO-252 (MP-3ZK) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Mounting Type | Surface Mount | |
| Technology | MOSFET (Metal Oxide) | |
| Operating Temperature | 175°C | |
| FET Type | N-Channel | |
| Maximum Power Dissipation | 1.2W (Ta), 100W (Tc) | |
| Maximum Gate-Source Voltage | ±20V | |
| Package | Bulk | |
| Product Status | Obsolete |
$1.34
Renesas Electronics America Inc.
Renesas Electronics Corporation pioneers intricate semiconductor solutions, empowering myriad intelligent devices to enhance human lives securely. A global leader in microcontrollers, analog products, and SoCs, Renesas shapes a limitless future across Automotive, Industrial, and ICT domains.
Bostock Quality Assurance
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