6116SA70DB

6116SA70DB Features

– Commercial: 15/20/25ns (max.)– Industrial: 20/25ns (max.)– Military: 20/25/35/45/55/70/90/120/150ns (max.)– 2V data retention voltage (LA version only)technologyratesDip and 24-pin SOICfor selected speeds

6116SA70DB Description

The IDT6116SA/LA is a 16,384-bit high-speed static RAM organizedas 2K x 8. It is fabricated using high-performance, high-reliability CMOStechnology.Access times as fast as 15ns are available. The circuit also offers areduced power standby mode. When CS goes HIGH, the circuit willautomatically go to, and remain in, a standby power mode, as long as CSremains HIGH. This capability provides significant system level power andcooling savings. The low-power (LA) version also offers a battery backupdata retention capability where the circuit typically consumes only 1µW to4µW operating off a 2V battery.All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fullystatic asynchronous circuitry is used, requiring no clocks or refreshing foroperation.The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing highboard-level packing densities.Military grade product is manufactured in compliance to MIL-STD-883,Class B, making it ideally suited to military temperature applicationsdemanding the highest level of performance and reliability.

6116SA70DB Pin Description