H22B5

H22B5 FEATURES

•Opaque housing •Low cost •035" apertures •High IC(ON)+E+D20.129 (3.3)0.119 (3.0)0.433 (11.0)0.422 (10.7)0.110 (2.8)0.091 (2.3)1340.020 (0.51) (SQ)0.472 (12.0)0.457 (11.6)0.249 (6.35)0.243 (6.15)0.39 (1.00)0.34 (0.85)LCCLLCOpticalCL.295 (7.5).272 (6.9)PIN 1 ANODEPIN 2 CATHODEPIN 3 COLLECTORPIN 4 EMITTER.133 (3.38).073 (1.85)0.125 (3.2)0.119 (3.0).315 (8.00)4312NOTES:1. Dimensions for all drawings are in inches (mm).2. Tolerance of ± .010 (.25) on all non-nominal dimensions unlessotherwise specified.

H22B5 DESCRIPTION

The H22B4, H22B5 and H22B6 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in aplastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejec-tion, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching theoutput from an “ON” to an “OFF” state.