H11G23S

H11G23S FEATURES

• High BVCEO- Minimum 100 V for H11G1- Minimum 80 V for H11G2- Minimum 55 V for H11G3 • High sensitivity to low input currentMinimum 500 percent CTR at IF = 1 mA • Low leakage current at elevated temperature(maximum 100 µA at 80°C) • Underwriters Laboratory (UL) recognized File# E90700

H11G23S DESCRIPTION

The H11GX series are photodarlington-type optically coupled optocouplers. These devices have agallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistorwhich has an integral base-emitter resistor to optimize elevated temperature characteristics.

H11G23S APPLICATIONS

• CMOS logic interface • Telephone ring detector • Low input TTL interface • Power supply isolation • Replace pulse transformerNOTEAll dimensions are in inches (millimeters)