H11F2W

H11F2W FEATURES

As a remote variable resistor •≤100Ωto≥300 MΩ •≥99.9% linearity •≤15 pF shunt capacitance •≥100 GΩI/O isolation resistanceAs an analog switch •Extremely low offset voltage •60 Vpk-pksignal capability •No charge injection or latch-up •ton, toff≤15 µS •UL recognized (File #E90700) •VDE recognized (File #E94766)– Ordering option ‘300’ (e.g. H11F1.300)

H11F2W DESCRIPTION

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-freecontrol of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

H11F2W APPLICATIONS

As a variable resistor – •Isolated variable attenuator •Automatic gain control •Active filter fine tuning/band switchingAs an analog switch – •Isolated sample and hold circuit •Multiplexed, optically isolated A/D conversion61616112654OUTPUTTERM.OUTPUTTERM.ANODECATHODE3