H11AG33SD

H11AG33SD FEATURES

• High efficiency low degradation liquid epitaxial IRED • Logic level compatible, input and output currents, withCMOS and LS/TTL • High DC current transfer ratio at low input currents • Underwriters Laboratory (UL) recognized File #E907006161611265 COL4 EMITTERBASEANODECATHODEN/C 3SCHEMATICParametersSymbolDeviceValueUnitsTOTAL DEVICETSTGAll-55 to +150°CStorage TemperatureOperating TemperatureTOPRAll-55 to +100°CLead Solder TemperatureTSOLAll260 for 10 sec°CTotal Device Power Dissipation @ 25°C (LED plus detector)PDAll260mWDerate Linearly From 25°C3.5mW/°CEMITTERIFAll50mAContinuous Forward CurrentReverse VoltageVRAll6VForward Current - Peak (1 µs pulse, 300 pps)IF(pk)All3.0ALED Power Dissipation 25°C AmbientPDAll75mWDerate Linearly From 25°C1.0mW/°CDETECTORDetector Power Dissipation @ 25°CPDAll150mWDerate Linearly from 25°C2.0mW/°CContinuous Collector CurrentAll50mA 2001 Fairchild Semiconductor CorporationDS3002131/28/021 OF 8www.fairchildsemi.com

H11AG33SD DESCRIPTION

The H11AG series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a siliconphototransistor in a dual in-line package. This deviceprovides the unique feature of the high current transferratio at both low output voltage and low input current.This makes it ideal for use in low power logic circuits,telecommunications equipment and portable electronicsisolation applications.

H11AG33SD APPLICATIONS

• CMOS driven solid state reliability • Telephone ring detector • Digital logic isolation