NE57811S/G,518

NE57811S/G,518 FEATURES

• Fast transient response time • Overtemperature protection • Overcurrent protection • Commercial (0 °C to +70 °C) temperature range • Reduced need for external components(switching FETs, inductors, decoupling capacitors) • Internal divider maintains termination voltage at 1/2 memorysupply voltage • Reference out for other memory and control components • Shutdown pin that may be used to put the device into low powermode • Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V)SDRAM systems

NE57811S/G,518 DESCRIPTION

The NE57811 is designed to provide power for termination of aDouble Data Rate (DDR) SDRAM memory bus. It significantlyreduces parts count, board space, and overall system costcompared to previous solutions.The NE57811 DDR termination regulator maintains an outputvoltage (DDR reference bus voltage) that is one-half that of the RAMsupply voltage. It is capable of providing up to ±3.5 A for sustainedperiods. Overcurrent limiting protects the NE57811 from inrushcurrents at start-up, and overtemperature shutdown protects thedevice in extreme temperature situations.The SPAK-5 (SOT756) package is thermally robust for flexibility ofthermal design. Because the NE57811 is a linear regulator, noexternal inductors or switching FETs are necessary. Fast responseto load changes reduces the need for output capacitors.

NE57811S/G,518 APPLICATIONS

• Desktop microcomputer systems

NE57811S/G,518 DESCRIPTION