JS28F512M29EWH0

JS28F512M29EWH0 Features

(cid:132) Supply voltage— VCC = 2.7 to 3.6 V for Program, Erase andRead— VCCQ = 1.65 to 3.6 V for I/O buffers(cid:132) Asynchronous Random/Page Read— Page size: 16 words or 32 bytes— Page access: 25 ns— Random access: 100ns (Fortified BGA);110 ns (TSOP)(cid:132) Buffer Program— 512-word program buffer(cid:132) Programming time— 0.88 µs per byte (1.14MB/s) typical whenusing full buffer size in buffer program(cid:132) Memory organization— Uniform blocks, 128 Kbytes/64 Kwordseach(cid:132) Program/Erase controller— Embedded byte/word program algorithms(cid:132) Program/ Erase Suspend and Resume— Read from any block during ProgramSuspend— Read and Program another block duringErase Suspend(cid:132) Blank Check to verify an erased block(cid:132) Unlock Bypass/Block Erase/Chip Erase/Writeto Buffer— Faster Buffered/Batch Programming— Faster Block and Chip Erase(cid:132) Vpp/WP# pin protection— Protects first or last block regardless ofblock protection settings(cid:132) Software protection— Volatile Protection— Non-Volatile Protection— Password Protection— Password Access(cid:132) Extended Memory block— 128-word/256-byte block for permanent,secure identification.— can be programmed and locked by factoryor by the customer(cid:132) Low power consumption— Standby(cid:132) Minimum 100,000 Program/Erase cycles perblock(cid:132) ETOXTM* X (65nm) MLC technology(cid:132) Fortified BGA and TSOP packages(cid:132) JESD47E Compliant(cid:132) Green packages available— RoHS Compliant— Halogen FreeApril 2011208045-111