JS28F256P33TFA

JS28F256P33TFA Product Features

(cid:132) High performance:(cid:132) Security:— 95ns initial access time for Easy BGA— 105ns initial access time for TSOP— 25ns 16-word asynchronous-page readmode— 52MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode— 4-, 8-, 16-, and continuous-word optionsfor burst mode— Buffered Enhanced Factory Programming at2.0MByte/s (typ) using 512-word buffer— 3.0V buffered programming at 1.5MByte/s(Typ) using 512-word buffer(cid:132) Architecture:— Multi-Level Cell Technology: HighestDensity at Lowest Cost— Asymmetrically-blocked architecture— Four 32-KByte parameter blocks: top orbottom configuration— 128-KByte main blocks— Blank Check to verify an erase block(cid:132) Voltage and Power:— VCC (core) voltage: 2.3 V – 3.6 V— VCCQ (I/O) voltage: 2.3 V – 3.6 V— Standby current: 65uA (Typ) for 256-Mbit— Continuous synchronous read current: 21mA (Typ)/24 mA (Max) at 52 MHz— One-Time Programmable Registers:— 64 unique factory device identifier bits— 2112 user-programmable OTP bits— Absolute write protection: VPP = VSS— Power-transition erase/program lockout— Individual zero-latency block locking— Individual block lock-down capability— Password Access feature(cid:132) Software:— 20µs (Typ) program suspend— 20µs (Typ) erase suspend— Numonyx™ Flash Data Integrator optimized— Basic Command Set and Extended FunctionInterface Command Set compatible— Common Flash Interface capable(cid:132) Density and Packaging— 56-Lead TSOP package (256-Mbit only)— 64-Ball Easy BGA package (256, 512-Mbit)— 16-bit wide data bus(cid:132) Quality and Reliability— Operating temperature: –40 °C to +85 °C— Minimum 100,000 erase cycles per block— 65nm ETOX™ X process technologyDatasheet1Aug 2009Order Number: 320003-08