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Obsolete
Micron Technology Inc.
Micron pioneers inventive solutions driving tech breakthroughs like AI, IoT, self-driving cars, and space exploration. Innovating data management revolutionizes global progress. Over 40 years, 40,000 patents contributed. A diverse team of 34,000 spans 18 nations, fostering inclusive brilliance.
Bostock Quality Assurance
JS28F128P33B85A Features
• High-performance read, program, and erase– 106ns initial read access– 108 MHz with zero wait-state synchronous burstreads: 7ns clock-to-data output– 133 MHz with zero wait-state synchronous burstreads: 6ns clock-to-data output– 8-, 16-, and continuous-word synchronous-burstreads– Programmable WAIT configuration– Customer-configurable output driver impedance– Buffered programming: 2.0 μs/word (TYP),512Mb– Block erase: 0.9s per block (TYP)– 20μs (TYP) program/erase suspend • Architecture– 16-bit wide data bus– Multilevel cell technology– Symmetrically-blocked array architecture– 256KB erase blocks– 1Gb device: Eight 128Mb partitions– 512Mb device: Eight 64Mb partitions– 256Mb device: Eight 32Mb partitions– Status register for partition/device status– Blank check feature • Quality and reliability– Automotive temperature: –40°C to +105°C (Grade2 AEC-Q100)– Minimum 100,000 ERASE cycles per block– More than 20 years data retention– 65nm process technology • Power– Core voltage: 1.7– 2.0V– I/O voltage: 1.7–2.0V– Standby current: 60μA (TYP) for 512Mb– Automatic power savings mode– 16-word synchronous-burst read current: 23mA(TYP) @ 108 MHz; 24mA (TYP) @ 133 MHz • Software– Micron® Flash data integrator (FDI) optimized– Basic command set (BCS) and extended com-mand set (ECS) compatible– Common Flash interface (CFI) capable • Security– One-time programmable (OTP) space64 unique factory device identifier bits2112 user-programmable OTP bits– Absolute write protection: VPP = GND– Power-transition erase/program lockout– Individual zero latency block locking– Individual block lock-down • Density and packaging– 256Mb, 512Mb, and 1Gb– Address-data multiplexed interface– 64-Ball TBGA256Mb, 512Mb, 1Gb StrataFlash MemoryFeaturesCCMTD-1725822587-2936MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN1Micron Technology, Inc. reserves the right to change products or specifications without notice.© 2013 Micron Technology, Inc. All rights reserved.Products and specifications discussed herein are subject to change by Micron without notice.
JS28F128P33B85A Features
CCMTD-1725822587-2936MT28GUxxxAAA2EGC-0AAT.pdf - Rev. F 5/18 EN2Micron Technology, Inc. reserves the right to change products or specifications without notice.© 2013 Micron Technology, Inc. All rights reserved.
Product Attributes
TYPE | DESCRIPTION | Select all |
---|---|---|
Memory Type | Non-Volatile | |
Programmable | Not Verified | |
Time to Access | 85 ns | |
Write Cycle Time for Word, Page | 85ns | |
Clock Frequency | 40 MHz | |
Product Status | Obsolete | |
Memory Interface | Parallel | |
Package | Tray | |
Memory Organization | 8M x 16 | |
Series | StrataFlash™ | |
Memory Size | 128Mbit | |
Technology | FLASH - NOR | |
Supplier Device Package | 56-TSOP | |
Memory Format | FLASH | |
Package / Case | 56-TFSOP (0.724", 18.40mm Width) | |
Mounting Type | Surface Mount | |
Operating Temperature | -40°C ~ 85°C (TC) | |
Supply Voltage | 2.3V ~ 3.6V |
Obsolete
Micron Technology Inc.
Micron pioneers inventive solutions driving tech breakthroughs like AI, IoT, self-driving cars, and space exploration. Innovating data management revolutionizes global progress. Over 40 years, 40,000 patents contributed. A diverse team of 34,000 spans 18 nations, fostering inclusive brilliance.