93C76CT-E/SN

93C76CT-E/SN Features:

1.8-5.51.8-5-52.5-5.52.5-5.54.5-5.54.5-5.51.8-5.52.5-5.54.5-5.5NoNoNoNoNoNoYesYesYesNoNoNoNoNoNoYesYesYes8-bit16-bit8-bit16-bit8-bit16-bit8- or 16-bit8- or 16-bit8- or 16-bitIII, EI, EI, EI, EII, EI, EP, SN, ST, MS, OTP, SN, ST, MS, OTP, SN, ST, MS, OTP, SN, ST, MS, OTP, SN, ST, MS, OTP, SN, ST, MS, OTP, SN, ST, MS, MC, MNP, SN, ST, MS, MC, MNP, SN, ST, MS, MC, MN • Low-Power CMOS Technology • ORG Pin to Select Word Size for ‘76C’ Version • 1024 x 8-bit Organization ‘A’ Devices (no ORG) • 512 x 16-bit Organization ‘B’ Devices (no ORG) • Program Enable Pin to Write-Protect the EntireArray (‘76C’ version only) • Self-Timed Erase/Write Cycles (includingAuto-Erase) • Automatic ERAL Before WRAL • Power-On/Off Data Protection Circuitry • Industry Standard 3-Wire Serial I/O • Device Status Signal (Ready/Busy) • Sequential Read Function • 1,000,000 Erase/Write Cycles • Data Retention > 200 Years • Pb-free and RoHS Compliant • Temperature Ranges Supported:-Industrial (I)-40°C to +85°C- Automotive (E) -40°C to +125°C

93C76CT-E/SN Description:

The Microchip Technology Inc. 93XX76A/B/C devicesare 8Kbit, low-voltage, serial Electrically ErasablePROMs (EEPROM). Word-selectable devices such asthe 93XX76C are dependent upon external logic levelsdriving the ORG pin to set word size. The 93XX76Adevices provide dedicated 8-bit memory organization,while the 93XX76B devices provide dedicated 16-bitmemory organization. A Program Enable (PE) pin allowsthe user to write-protect the entire memory array.Advanced CMOS technology makes these devices idealfor low-power, nonvolatile memory applications. The93XX Series is available in standard packages including8-lead PDIP and SOIC, and advanced packaging includ-ing 8-lead MSOP, 6-lead SOT-23, 8-lead 2x3 DFN/TDFN and 8-lead TSSOP. All packages are Pb-free(Matte Tin) finish.