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ZL1505ALNFT

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ZL1505ALNFT

Intersil
ZL1505ALNFT
IC GATE DRVR HALF-BRIDGE 10DFN

Obsolete

Intersil

Intersil

Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.

Bostock Quality Assurance

ZL1505ALNFT Features

• High-speed, high-current drivers for synchronous N-channelMOSFETs • Adaptive dead-time control optimizes efficiency when usedwith Digital-DC controllers • Integrated 30V bootstrap Schottky diode • Capable of driving 40A per phase • Supports switching frequency up to 1.4MHz- >4A source, >5A sink low-side driver- >3A source/sink high-side driver- <10ns rise/fall times, low propagation delay • Adjustable gate drive strength optimizes efficiency fordifferent VIN, VOUT, IOUT, FSW and MOSFET combinations • Internal non-overlap watchdog prevents shoot-throughcurrents

ZL1505ALNFT Applications*(see page 12)

• High efficiency, high-current DC/DC buck converters withdigital control and PMBus™ • Multi-phase digital DC/DC converters with phaseadding/dropping • Power train modules • Synchronous rectification for secondary side isolated powerconverters

ZL1505ALNFT Pin Descriptions

PIN NUMBERPIN NAMETYPE (Note 3)DESCRIPTION1HSELIHigh-side gate drive current selector. Connect to BST for maximum gate drive current;connect to SW for 50% of maximum gate drive current.2GHOOutput of high-side gate driver. Connect to the gate of high-side FET.3SWI/OPhase node. Return path for high-side driver. Connect to source of high-side FET and drainof low-side FET.4PWMHIHigh-side PWM control input.5PWMLILow-side PWM control input.6LSELILow-side gate drive current selector. Connect to VDD for maximum gate drive current;connect to GND for 50% of maximum gate drive current.7GNDPWRGround. All signals return to this pin.8GLOOutput of low-side gate driver. Connect to the gate of low-side FET.9VDDPWRGate drive bias supply. Connect a high-quality bypass capacitor from this pin to GND.10BSTPWRBootstrap supply. Connect external capacitor to SW node.EPADGNDPWRGround.NOTE:3. I = Input, O = Output, PWR = Power OR Ground.

Product Attributes

TYPEDESCRIPTIONSelect all
Supply Voltage4.5V ~ 7.5V
Voltage Levels for Logic Low and High1.7V, 3.4V
Current - Peak Output (Source, Sink)3.2A, 3.2A
Input TypeNon-Inverting
PackageTape & Reel (TR)
Maximum High Side Voltage (Bootstrap)30 V
Product StatusObsolete
Rise / Fall Time (Typical)5.3ns, 4.8ns
ProgrammableNot Verified
Operating Temperature-40°C ~ 125°C (TJ)
Driven ConfigurationHalf-Bridge
Mounting TypeSurface Mount
Channel TypeIndependent
Package / Case10-VFDFN Exposed Pad
Number of Drivers2
Supplier Device Package10-DFN (3x3)
Gate TypeN-Channel MOSFET

Obsolete

Intersil

Intersil

Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.

Bostock Quality Assurance

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