GT28F008B3T110

GT28F008B3T110 Product Features

• Flexible SmartVoltage Technology— 2.7 V–3.6 V Read/Program/Erase— 12 V VPP Fast Production Programming1.65 V–2.5 V or 2.7 V–3.6 V I/O Option— Reduces Overall System Power(cid:127) High Performance— 2.7 V–3.6 V: 70 ns Max Access Time(cid:127) Optimized Block Sizes— Eight 8-KB Blocks for Data,Top orBottom Locations— Up to One Hundred Twenty-Seven 64-KB Blocks for Code(cid:127) Block Locking— VCC-Level Control through WP#(cid:127) Low Power Consumption— 9 mA Typical Read Current(cid:127) Absolute Hardware-Protection— VPP = GND Option— VCC Lockout Voltage(cid:127) Extended Temperature Operation— –40 °C to +85 °C(cid:127) Automated Program and Block Erase— Status RegistersIntel® Flash Data Integrator Software— Flash Memory Manager— System Interrupt Manager— Supports Parameter Storage, StreamingData (e.g., Voice)(cid:127) Extended Cycling Capability— Minimum 100,000 Block Erase CyclesGuaranteed(cid:127) Automatic Power Savings Feature— Typical ICCS after Bus InactivityStandard Surface Mount Packaging— 48-Ball CSP Packages— 40- and 48-Lead TSOP Packages(cid:127) Density and Footprint Upgradeable forcommon package— 4-, 8-, 16-, 32- and 64-Mbit Densities(cid:127) ETOX™ VIII (0.13 µm) FlashTechnology— 32- and 64-Mbit Densities(cid:127) ETOX™ VII (0.18 µm) Flash Technology— 16-, 32- and 64-Mbit Densities(cid:127) ETOX ™ VI (0.25µm) Flash Technology— 8-, 16-, and 32-Mbit Densities(cid:127) ETOX™ V (0.4µm)Flash Technologies— 4-Mbit Densityx8 not recommended for new designs4-Mbit density not recommended for newdesigns