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Obsolete
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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IRF6709S2TR1PBF Description
Buy high-quality IRF6709S2TR1PBF components from Infineon Technologies at szcomponents. Our IRF6709S2TR1PBF parts undergo rigorous quality control to ensure they meet the highest industry standards, guaranteeing reliability and performance. The IRF6709S2TR1PBF Single FETs, MOSFETs is currently in Obsolete. This part number works in temperatures from -55°C ~ 175°C (TJ). The IRF6709S2TR1PBF offers Mounting Type features such as Surface Mount. This Single FETs, MOSFETs corresponds to a DirectFET™ Isometric S1 package. The IRF6709S2TR1PBF comes in a DirectFET™ Isometric S1 package. If you haven't found what you're seeking, you can acquire valuable information via email. This includes details on the IRF6709S2TR1PBF inventory quantity, preferential pricing, datasheets, and the manufacturer. We're always eager to assist you, so don't hesitate to reach out. Feel free to contact us anytime at szcomponents.com.
Product Attributes
| TYPE | DESCRIPTION | Select all |
|---|---|---|
| Maximum Input Capacitance (Ciss) at Vds | 1010 pF @ 13 V | |
| Maximum Gate Charge (Qg) @ Vgs | 12 nC @ 4.5 V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.35V @ 25µA | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 7.8mOhm @ 12A, 10V | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Package / Case | DirectFET™ Isometric S1 | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 39A (Tc) | |
| Supplier Device Package | DirectFET™ Isometric S1 | |
| Drain to Source Voltage (Vdss) | 25 V | |
| Mounting Type | Surface Mount | |
| Technology | MOSFET (Metal Oxide) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| FET Type | N-Channel | |
| Maximum Power Dissipation | 1.8W (Ta), 21W (Tc) | |
| Maximum Gate-Source Voltage | ±20V | |
| Series | HEXFET® | |
| Package | Tape & Reel (TR) | |
| Product Status | Obsolete |
Obsolete
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
Bostock Quality Assurance
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