6ED2231S12TXUMA1

6ED2231S12TXUMA1 Features Product summary

 Fully operational to +1200 V Optimized for IGBT (insulated gate bipolar transistor) IO+ / IO-(typ) = + 0.35 A / - 0.65 AVCCVS_OFFSET ≤ 1200 V= 13 V – 20 VtON / tOFF (typ.) = 700 ns/ 650 nsDeadtime (typ.) = 460 nsPackageDSO-24 (DSO-28 with 4 pins removed)/ SiC(Silicon carbide) MOSFETIntegrated Ultra‐fast Bootstrap Diode Floating channel designed for bootstrap operation Output source/sink current capability +0.35 A/‐0.65 A Tolerant to negative transient voltage up to -100 V(Pulse width is up 700 ns) given by SOI-technology Undervoltage lockout for both channels 3.3 V, 5 V, and 15 V input logic compatible Over current protection with ±5% ITRIP threshold Fault reporting, automatic Fault clear andEnable function on the same pin (RFE) Matched propagation delay for all channelsIntegrated 460 ns deadtime protection Shoot-through (cross-conduction) protection VCC support up to 25 V 2 kV HBM ESD

6ED2231S12TXUMA1 Typical applications

Industrial DrivesEmbedded inverters for Motor Control in Pumps, FansCommercial Air Conditioning

6ED2231S12TXUMA1 Description

The 6ED2231S12T is a high voltage, high speed power IGBT or SiC MOSFET gate driver with three independenthigh side and low side referenced output channels for three phase applications. Proprietary HVIC and latchimmune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible withstandard CMOS or TTL outputs, down to 3.3 V logic. An over‐current protection (OCP) function which terminatesall six outputs can also be derived from this resistor. An open drain FAULT signal is provided to indicate that anover-current or undervoltage shutdown has occurred. Fault conditions are cleared automatically after a delayprogrammed externally via an RC network. The output drivers feature a high-pulse current buffer stage designedfor minimum driver cross-conduction. The floating channel can be used to drive IGBTs or SiC MOSFETs in thehigh side configuration which operates up to 1200 V. Propagation delays are matched to simplify the HVIC’s usein high frequency applications.*(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer to ApplicationNotes & Design Tips for proper circuit board layout.Figure 1Typical application block diagramDatasheetwww.infineon.com/soi2 of 25V 1.22022-09-19

6ED2231S12TXUMA1 high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch