1EDI3031ASXUMA1

1EDI3031ASXUMA1 Features

• • • • • • • • • • • •Single channel isolated SiC driver using coreless transformer technologyFor SiC-MOSFETs up to 1200 VCMTI up to 150 V/ns at 1000 V8 kV basic insulation according to VDE V 0884-11:2017-01Basic insulation recognized according to UL 1577Min. 12 A peak current rail-to-rail outputPropagation delay 60 ns typicalTyp. 10 A integrated Active Miller Clamp supports unipolar switchingASC pin for PMSM motor drive applicationIntegrated safety features to support ASIL B(D):Redundant DESAT and OCP protection-Gate and output stage monitoring-Shoot-through protection-Primary/secondary supply monitoring--Internal supervisionISO 26262 Safety Element out of Context for safety requirements up toASIL BGreen Product (RoHS compliant)

1EDI3031ASXUMA1 Description

The EiceDRIVER™ gate driver 1EDI3031AS is a high-voltage SiC-MOSFET driver designed for automotive motordrives above 5 kW. The device is based on Infineon’s coreless transformer (CT) technology, providing galvanicinsulation between low voltage and high voltage domains. The device has been designed to support 400 V, 600V and 1200 V SiC-MOSFET technologies.Datasheetwww.infineon.com/isolated-high-voltage-gate-driverPlease read the sections "Important notice" and "Warnings" at the end of this documentRev. 1.12022-02-17

1EDI3031ASXUMA1 Potential applications

• • •Traction inverters for HEV and EVAuxiliary inverters for HEV and EVHigh power DC/DC converters

1EDI3031ASXUMA1 The device features a high output stage of minimum 12 A peak current. A comprehensive feature set allows

1EDI3031ASXUMA1 Description

1EDI3031ASXUMA1 applications and a detailed error diagnosis via a PWM signal.