6116LA45SOG

6116LA45SOG Features

– Military: 20/25/35/45/55/70/90/120/150ns (max.)– Industrial: 20/25/35/45ns (max.)– Commercial: 15/20/25/35/45ns (max.)– 2V data retention voltage (LA version only)technologyrates24-pin SOIC and 24-pin SOJ

6116LA45SOG Description

The IDT6116SA/LA is a 16,384-bit high-speed static RAMorganized as 2K x 8. It is fabricated using IDT's high-performance,high-reliability CMOS technology.Access times as fast as 15ns are available. The circuit also offers areduced power standby mode. When CS goes HIGH, the circuit willautomatically go to, and remain in, a standby power mode, as longas CS remains HIGH. This capability provides significant system levelpower and cooling savings. The low-power (LA) version also offers abattery backup data retention capability where the circuit typicallyconsumes only 1µW to 4µW operating off a 2V battery.All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fullystatic asynchronous circuitry is used, requiring no clocks or refreshingfor operation.The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic orceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providinghigh board-level packing densities.Military grade product is manufactured in compliance to the latestversion of MIL-STD-883, Class B, making it ideally suited to militarytemperature applications demanding the highest level of performance andreliability.

6116LA45SOG Pin Description